F1T7G

Active

Taiwan Semiconductor Corporation

500NS, 1A, 1000V, FAST RECOVERY RECTIFIER

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

500NS, 1A, 1000V, FAST RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	F1T7G

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	T-18, Axial
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	TS-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Current - Reverse Leakage @ Vr	Technology	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Capacitance @ Vr, F	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation F1T7G	5 µA	Standard	1 A	500 ns	T-18 Axial	TS-1	15 pF	Through Hole	1000 V	200 mA 500 ns	150 °C	-55 °C	1.3 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 1A Through Hole TS-1

Technical documentation and resources