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STP220N6F7 - TO-220-3

STP220N6F7

Active
STMicroelectronics

N-CHANNEL 60 V, 2,1 OHM TYP., 120 A, STRIPFET F7 POWER MOSFET IN A TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+15
STP220N6F7 - TO-220-3

STP220N6F7

Active
STMicroelectronics

N-CHANNEL 60 V, 2,1 OHM TYP., 120 A, STRIPFET F7 POWER MOSFET IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP220N6F7
Current - Continuous Drain (Id) @ 25°C120 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]100 nC
Input Capacitance (Ciss) (Max) @ Vds6400 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]237 W
Rds On (Max) @ Id, Vgs2 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.38
50$ 1.91
100$ 1.57
500$ 1.33
1000$ 1.13
2000$ 1.07
5000$ 1.03
10000$ 1.00
NewarkEach 1$ 3.78
10$ 2.19
100$ 2.03
500$ 1.75
1000$ 1.67
3000$ 1.59
5000$ 1.58

Description

General part information

STP220N6F7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.