SGB02N120ATMA1

Obsolete

Infineon Technologies

IGBT 1200V 6.2A 62W TO263-3

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Obsolete

Infineon Technologies

IGBT 1200V 6.2A 62W TO263-3

Technical Specifications

Parameters and characteristics for this part

Specification	SGB02N120ATMA1

Current - Collector Pulsed (Icm)	9.6 A
Gate Charge	11 nC
IGBT Type	NPT
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]	62 W
Supplier Device Package	PG-TO263-3-2
Switching Energy	220 µJ
Td (on/off) @ 25°C	260 ns, 23 ns
Test Condition	2 A, 800 V, 91 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	3.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Gate Charge	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Test Condition	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Td (on/off) @ 25°C	IGBT Type	Package / Case	Switching Energy	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies SGB02N120ATMA1	11 nC	9.6 A	3.6 V	2 A 15 V 91 Ohm 800 V	Surface Mount	1200 V	PG-TO263-3-2	23 ns 260 ns	NPT	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	220 µJ	62 W	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT NPT 1200 V 6.2 A 62 W Surface Mount PG-TO263-3-2

Technical documentation and resources