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JAN1N5811US/TR

JAN1N5811US/TR

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Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 150V, 6A, 30NS B-MELF BAG T/R

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JAN1N5811US/TR

JAN1N5811US/TR

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 150V, 6A, 30NS B-MELF BAG T/R

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Description

General part information

JAN1N5811US-TR-Rectifier Series

This "Ultrafast Recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 6.0 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with void-less glass construction using an internal "Category 1" metallurgical bond. These devices are available in both surface mount MELF and leaded package configurations. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN1N5811US/TR
Capacitance60 pF
Current - Average Rectified (Io)3 A, 6 A
Current - Reverse Leakage5 µA
GradeMilitary
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseSQ-MELF, B
Package NameSQ-MELF, B
QualificationMIL-PRF-19500, 477
Reverse Recovery Time (trr)30 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)150 V
Voltage - Forward (Vf) (Max)875 mV

Pricing

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