RN2711(TE85L,F)

Active

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W USV

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W USV

Technical Specifications

Parameters and characteristics for this part

Specification	RN2711(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	400 hFE
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SC-70-5, 5-TSSOP, SOT-353
Power - Max [Max]	200 mW
Supplier Device Package	5-SSOP
Transistor Type	2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Power - Max [Max]	Frequency - Transition	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Toshiba Semiconductor and Storage RN2711(TE85L,F)	2 PNP - Pre-Biased (Dual) (Emitter Coupled)	300 mV	Surface Mount	100 nA	50 V	100 mA	5-SSOP	200 mW	200 MHz	5-TSSOP SC-70-5 SOT-353	400 hFE
Toshiba Semiconductor and Storage RN2711,LF	2 PNP - Pre-Biased (Dual) (Emitter Coupled)	300 mV	Surface Mount	100 nA	50 V	100 mA	USV	200 mW	200 MHz	5-TSSOP SC-70-5 SOT-353		120

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 200mW Surface Mount 5-SSOP

Technical documentation and resources