ZX5T851ASTZ

Active

Diodes Inc

TRANS GP BJT NPN 60V 4.5A 1000MW 3-PIN E-LINE BOX

Search across all available documentation for this part.

Active

Diodes Inc

TRANS GP BJT NPN 60V 4.5A 1000MW 3-PIN E-LINE BOX

Technical Specifications

Parameters and characteristics for this part

Specification	ZX5T851ASTZ

Current - Collector (Ic) (Max) [Max]	4.5 A
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	130 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	E-Line-3
Power - Max [Max]	1 W
Supplier Device Package	E-Line (TO-92 compatible)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	210 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

NPN, 60V, 4.5A, E-Line

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max)
Diodes Inc ZX5T851ASTZ	Through Hole	-55 °C	150 °C	20 nA	E-Line-3	4.5 A	NPN	60 V	130 MHz	E-Line (TO-92 compatible)	1 W	100	210 mV
Diodes Inc ZX5T851GTA	Surface Mount	-55 °C	150 °C	20 nA	TO-261-4 TO-261AA		NPN	60 V	130 MHz	SOT-223-3	3 W	100	260 mV
Diodes Inc ZX5T851ZTA	Surface Mount	-55 °C	150 °C	20 nA	TO-243AA		NPN	60 V	130 MHz	SOT-89-3	2.1 W	100	230 mV	5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly