BCX 56-10 E6327

Obsolete

Infineon Technologies

TRANS NPN 80V 1A SOT89

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Obsolete

Infineon Technologies

TRANS NPN 80V 1A SOT89

Technical Specifications

Parameters and characteristics for this part

Specification	BCX 56-10 E6327

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	63 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Supplier Device Package	PG-SOT89
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Supplier Device Package	Operating Temperature	Frequency - Transition	Mounting Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Transistor Type
Infineon Technologies BCX 56-10 E6327	63 hFE	80 V	TO-243AA	500 mV	2 W	PG-SOT89	150 °C	100 MHz	Surface Mount	100 nA	1 A	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount PG-SOT89

Technical documentation and resources