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TO-236AB

PDTD123YT-QR

Active
Nexperia USA Inc.

50 V, 500 MA NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 2.2 KΩ, R2 = 10 KΩ

TO-236AB

PDTD123YT-QR

Active
Nexperia USA Inc.

50 V, 500 MA NPN RESISTOR-EQUIPPED TRANSISTOR; R1 = 2.2 KΩ, R2 = 10 KΩ

Description

General part information

PDTD123 Series

NPN Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Technical Specifications

Parameters and characteristics for this part

SpecificationPDTD123YT-QR
Current - Collector (Ic) (Max)500 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)70
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameTO-236AB
Power - Max250 mW
QualificationAEC-Q101
Resistor - Base (R1) Resistance2.2 kOhm
Resistor - Emitter Base (R2)10 kOhms
Transistor TypePre-Biased, NPN
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

3D models and CAD resources for this part