IXTY55N075T

Obsolete

IXYS

MOSFET N-CH 75V 55A TO252

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 75V 55A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	IXTY55N075T

Current - Continuous Drain (Id) @ 25°C	55 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1400 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	130 W
Rds On (Max) @ Id, Vgs	19.5 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXTY55N075T	4 V	MOSFET (Metal Oxide)	130 W	55 A	TO-252AA	N-Channel	1400 pF	19.5 mOhm	75 V	Surface Mount	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 75 V 55A (Tc) 130W (Tc) Surface Mount TO-252AA

Technical documentation and resources

No documents available