IPP16CNE8N G

Obsolete

Infineon Technologies

MOSFET N-CH 85V 53A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 85V 53A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP16CNE8N G

Current - Continuous Drain (Id) @ 25°C	53 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	3230 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	100 W
Rds On (Max) @ Id, Vgs	16.5 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Rds On (Max) @ Id, Vgs
Infineon Technologies IPP16CNE8N G	MOSFET (Metal Oxide)	53 A	Through Hole	4 V	-55 °C	175 ░C	85 V	100 W	3230 pF	PG-TO220-3	20 V	N-Channel	48 nC	10 V	TO-220-3	16.5 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 85 V 53A (Tc) 100W (Tc) Through Hole PG-TO220-3

Technical documentation and resources