RF4E110GNTR

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Rohm Semiconductor

MOSFET, N-CH, 30V, 11A, HUML2020

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RF4E110GNTR

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Rohm Semiconductor

MOSFET, N-CH, 30V, 11A, HUML2020

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Description Specifications Series Pricing CAD Documents

Description

General part information

RF4E110 Series

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Technical Specifications

Parameters and characteristics for this part

Specification	RF4E110GNTR

Current - Continuous Drain (Id) (Ta)	11 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	7.4 nC
Input Capacitance (Ciss) (Max)	504 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerUDFN
Package Name	HUML2020L8
Power Dissipation (Max)	2 W
Rds On (Max)	11.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

RF4E110 Series

4.5V Drive Nch MOSFET

Part	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Package / Case	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Operating Temperature	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package Name	Mounting Type	Gate Charge (Max)
Rohm Semiconductor RF4E110GNTR	2 W	10 V	4.5 V	11 A	8-PowerUDFN	MOSFET (Metal Oxide)	30 V	2.5 V	150 °C	20 V	N-Channel	504 pF	11.3 mOhm	HUML2020L8	Surface Mount	7.4 nC
Rohm Semiconductor RF4E110BNTR	2 W	10 V	4.5 V	11 A	8-PowerUDFN	MOSFET (Metal Oxide)	30 V	2 V	150 °C	20 V	N-Channel	1200 pF	11.1 mOhm	HUML2020L8	Surface Mount	24 nC 24 nC