IPLU300N04S4R7XTMA2

Obsolete

Infineon Technologies

MOSFET N-CH 40V 300A 8HSOF

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 40V 300A 8HSOF

Technical Specifications

Parameters and characteristics for this part

Specification	IPLU300N04S4R7XTMA2

Current - Continuous Drain (Id) @ 25°C	300 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	287 nC
Input Capacitance (Ciss) (Max) @ Vds	22945 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max) [Max]	429 W
Supplier Device Package	PG-HSOF-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Technology	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Power Dissipation (Max) [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies IPLU300N04S4R7XTMA2	MOSFET (Metal Oxide)	20 V	Surface Mount	-55 °C	175 ░C	22945 pF	40 V	10 V	PG-HSOF-8-1	429 W	8-PowerSFN	287 nC	4 V	N-Channel	300 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 300A (Tc) 429W (Tc) Surface Mount PG-HSOF-8-1

Technical documentation and resources

No documents available