STP25NM60N

Obsolete

STMicroelectronics

MOSFET N-CH 600V 21A TO220AB

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Obsolete

STMicroelectronics

MOSFET N-CH 600V 21A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP25NM60N

Current - Continuous Drain (Id) @ 25°C	21 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	84 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2400 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature
STMicroelectronics STP25NM50N	TO-220-3	-55 °C	150 °C	25 V	500 V	22 A	140 mOhm	2565 pF	84 nC	TO-220	4 V	Through Hole	MOSFET (Metal Oxide)	N-Channel	10 V
STMicroelectronics STP25NM60ND	TO-220-3			25 V	600 V	21 A	160 mOhm			TO-220	5 V	Through Hole	MOSFET (Metal Oxide)	N-Channel	10 V	80 nC	2400 pF	150 °C
STMicroelectronics STP25NM60N	TO-220-3			25 V	600 V	21 A	160 mOhm		84 nC	TO-220	4 V	Through Hole	MOSFET (Metal Oxide)	N-Channel	10 V		2400 pF	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 21A (Tc) 160W (Tc) Through Hole TO-220

Technical documentation and resources