SSM6N357R,LF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.65A 6TSOPF

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 60V 0.65A 6TSOPF

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N357R,LF

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	650 mA
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	1.5 nC
Input Capacitance (Ciss) (Max) @ Vds	60 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs	1.8 Ohm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Rds On (Max) @ Id, Vgs	Technology	Configuration	Vgs(th) (Max) @ Id	Supplier Device Package
Toshiba Semiconductor and Storage SSM6N357R,LF	60 pF	60 V	6-SMD Flat Leads	Surface Mount	1.5 nC	1.5 W	650 mA	150 °C	1.8 Ohm	MOSFET (Metal Oxide)	2 N-Channel (Dual)	2 V	6-TSOP-F

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General part information

Mosfet Array 60V 650mA (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F

Technical documentation and resources