SUP60030E-GE3

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Vishay Siliconix

MOSFET N-CH 80V 120A TO220AB

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Vishay Siliconix

MOSFET N-CH 80V 120A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SUP60030E-GE3

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	141 nC
Input Capacitance (Ciss) (Max) @ Vds	7910 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs	3.4 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 80V 120A TO220AB

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Power Dissipation (Max) [Max]	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case
Vishay Siliconix SUP60030E-GE3	141 nC	120 A	4 V	7910 pF	3.4 mOhm	N-Channel	-55 °C	175 ░C	80 V	Through Hole	TO-220AB	375 W	MOSFET (Metal Oxide)	20 V	10 V	7.5 V	TO-220-3

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General part information

N-Channel 80 V 120A (Tc) 375W (Tc) Through Hole TO-220AB

Technical documentation and resources