XPH4R10ANB,L1XHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 70A 8SOP

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 70A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	XPH4R10ANB,L1XHQ

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	960 mW, 170 W
Rds On (Max) @ Id, Vgs	4.1 mOhm
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Operating Temperature	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage XPH4R10ANB,L1XHQ	8-PowerVDFN	175 °C	100 V	MOSFET (Metal Oxide)	3.5 V	8-SOP Advance (5x5)	Surface Mount	N-Channel	6 V 10 V	170 W 960 mW	75 nC	70 A	20 V	4.1 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 70A (Ta) 960mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources