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IPP60R105CFD7XKSA1 - PG-TO220-3

IPP60R105CFD7XKSA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 105 MOHM; FAST RECOVERY DIODE

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IPP60R105CFD7XKSA1 - PG-TO220-3

IPP60R105CFD7XKSA1

Active
Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 105 MOHM; FAST RECOVERY DIODE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP60R105CFD7XKSA1
Current - Continuous Drain (Id) @ 25°C21 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC
Input Capacitance (Ciss) (Max) @ Vds1752 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)106 W
Rds On (Max) @ Id, Vgs105 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.70
10$ 2.46
100$ 1.94
NewarkEach 1$ 5.73
10$ 5.14
25$ 3.61
50$ 3.50
100$ 3.39
250$ 3.18
500$ 2.96

Description

General part information

IPP60R105 Series

The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Documents

Technical documentation and resources