SPU30P06P

Obsolete

Infineon Technologies

MOSFET P-CH 60V 30A TO251-3

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Obsolete

Infineon Technologies

MOSFET P-CH 60V 30A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPU30P06P

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1535 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	75 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies SPU30P06P	75 mOhm	1535 pF	P-Channel	10 V	PG-TO251-3	20 V	60 V	-55 °C	175 ░C	Through Hole	MOSFET (Metal Oxide)	30 A	4 V	125 W	IPAK TO-251-3 Short Leads TO-251AA	48 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 30A (Tc) 125W (Tc) Through Hole PG-TO251-3

Technical documentation and resources