IDP08E65D1XKSA1

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Infineon Technologies

THE IDP08E65D1 IS A 650 V SILICON POWER DIODE IN TO-220 REAL2PIN PACKAGE

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IDP08E65D1XKSA1

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Infineon Technologies

THE IDP08E65D1 IS A 650 V SILICON POWER DIODE IN TO-220 REAL2PIN PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IDP08E65D1XKSA1

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	80 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

IDP08E65 Series

Part	Current - Reverse Leakage @ Vr	Supplier Device Package	Reverse Recovery Time (trr)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Package / Case
Infineon Technologies IDP08E65D1XKSA1	40 µA	TO-220-2	80 ns	200 mA 500 ns	650 V	Standard	8 A	-40 °C	175 ░C	Through Hole	1.7 V	TO-220-2

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 0.54
Digikey	Tube	500	$ 0.86

Description

General part information

IDP08E65 Series

Rapid 1switching 650 V, 8 A emitter controlledpower silicon diodesin a TO-220 real2pin package is perfectly suited for Power Factor Correction (PFC) topologies, typically found in major home appliances such as air conditioners and washing machines.

Documents

Technical documentation and resources

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