SCT3030KLHRC11

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Rohm Semiconductor

1200V, 72A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

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SCT3030KLHRC11

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Rohm Semiconductor

1200V, 72A, THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

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Description Specifications Series Pricing CAD Documents

Description

General part information

SCT3030 Series

SCT3030AR is anSiC MOSFETfeaturing a trench gate structure optimized for server power supplies, motor drives, solar power inverters, andEV charging stationsrequiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result, the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.

Technical Specifications

Parameters and characteristics for this part

Specification	SCT3030KLHRC11

Current - Continuous Drain (Id) (Tc)	72 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	131 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2222 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-3
Package Name	TO-247N
Power Dissipation (Max)	339 W
Qualification	AEC-Q101
Rds On (Max)	39 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-4 V
Vgs (Max) Positive	22 V
Vgs(th) (Max)	5.6 V

SCT3030 Series

650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs(th) (Max)	FET Type	Package / Case	Gate Charge (Max)	Package Name	Vgs (Max) Positive	Vgs (Max) Negative	Technology	Current - Continuous Drain (Id) (Tc)	Mounting Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package Leads	Grade	Qualification
Rohm Semiconductor SCT3030ALGC11	262 W	18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-3	104 nC	TO-247N	22 V	-4 V	SiCFET (Silicon Carbide)	70 A	Through Hole	1526 pF	39 mOhm
Rohm Semiconductor SCT3030AW7TL	267 W		650 V	175 °C	5.6 V	N-Channel		104 nC	D2PAK TO-263-7	22 V	-4 V	SiCFET (Silicon Carbide)	70 A	Surface Mount	1526 pF	39 mOhm	7 Leads
Rohm Semiconductor SCT3030KLGC11	339 W	18 V	1200 V	175 °C	5.6 V	N-Channel	TO-247-3	131 nC	TO-247N	22 V	-4 V	SiCFET (Silicon Carbide)	72 A	Through Hole	2222 pF	39 mOhm
Rohm Semiconductor SCT3030KLHRC11	339 W	18 V	1200 V	175 °C	5.6 V	N-Channel	TO-247-3	131 nC	TO-247N	22 V	-4 V	SiCFET (Silicon Carbide)	72 A	Through Hole	2222 pF	39 mOhm		Automotive	AEC-Q101
Rohm Semiconductor SCT3030ARC14	262 W	18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-4	104 nC	TO-247-4L	22 V	-4 V	SiCFET (Silicon Carbide)	70 A	Through Hole	1526 pF	39 mOhm
Rohm Semiconductor SCT3030ARC15	262 W	18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-4	104 nC	TO-247-4L	22 V	-4 V	MOSFET (Metal Oxide)	70 A	Through Hole	1526 pF	39 mOhm
Rohm Semiconductor SCT3030ARHRC15	262 W	18 V	650 V	175 °C	5.6 V	N-Channel	TO-247-4	104 nC	TO-247-4L	22 V	-4 V	MOSFET (Metal Oxide)	70 A	Through Hole	1526 pF	39 mOhm		Automotive	AEC-Q101