IPN50R650CEATMA1
ObsoleteCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 500 V ; SOT-223 PACKAGE; 650 MOHM; PRICE/PERFORMANCE
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IPN50R650CEATMA1
ObsoleteCOOLMOS™ CE N-CHANNEL SUPERJUNCTION MOSFET 500 V ; SOT-223 PACKAGE; 650 MOHM; PRICE/PERFORMANCE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPN50R650CEATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 13 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 342 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | TO-261AA, TO-261-4 |
| Power Dissipation (Max) | 5 W |
| Rds On (Max) @ Id, Vgs | 650 mOhm |
| Supplier Device Package | PG-SOT223-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPN50R650 Series
Infineon is growing the portfolio ofCoolMOS™ CEwith theSOT-223 packageas a cost effective alternative to DPAK that also enables footprint reduction in some designs. The package can be placed on a typical DPAK footprint and comes with only a small compromise in thermal behavior. The SOT-223 from Infineon targets LED lighting and mobile charger applications.
Documents
Technical documentation and resources