FF650R17IE4PBOSA1

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Infineon Technologies

THE FF650R17IE4P IS A DUAL IGBT4 - E4 MODULE IN A PRIMEPACK™ 2 HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1700 V AND 650 A.

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Infineon Technologies

THE FF650R17IE4P IS A DUAL IGBT4 - E4 MODULE IN A PRIMEPACK™ 2 HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1700 V AND 650 A.

Technical Specifications

Parameters and characteristics for this part

Specification	FF650R17IE4PBOSA1

Configuration	2 Independent
Current - Collector (Ic) (Max) [Max]	650 A
Current - Collector Cutoff (Max) [Max]	5 mA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	54 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Package / Case	Module
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	2.45 V
Voltage - Collector Emitter Breakdown (Max)	1700 V

Part	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Input Capacitance (Cies) @ Vce	Package / Case	Current - Collector Cutoff (Max) [Max]	Mounting Type	Input	Configuration	Supplier Device Package	IGBT Type	Current - Collector (Ic) (Max) [Max]
Infineon Technologies FF650R17IE4BOSA1	2.45 V	1700 V	54 nF	Module	5 mA	Chassis Mount	Standard	2 Independent	Module
Infineon Technologies FF650R17IE4DPB2BOSA1	2.45 V	1700 V	54 nF	Module	5 mA	Chassis Mount	Standard	2 Independent	Module	Trench Field Stop	650 A
Infineon Technologies FF650R17IE4PBOSA1	2.45 V	1700 V	54 nF	Module	5 mA	Chassis Mount	Standard	2 Independent	Module	Trench Field Stop	650 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PrimePACK™2 1700 V, 650 A half-bridge dualIGBT modulewith TRENCHSTOP™ IGBT4, NTC, fast switching chip andThermal Interface Material.

Technical documentation and resources