IDW75E60FKSA1
ActiveTHE IDW75E60 IS A 600 V IGBT SILICON POWER DIODE IN TO-247 PACKAGE
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IDW75E60FKSA1
ActiveTHE IDW75E60 IS A 600 V IGBT SILICON POWER DIODE IN TO-247 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IDW75E60FKSA1 |
|---|---|
| Current - Average Rectified (Io) | 120 A |
| Current - Reverse Leakage @ Vr | 40 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-247-3 |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | PG-TO247-3-1 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IDW75E60 Series
The IDW75E60 is a Fast EmCon Diode offers low reverse recovery charge and low forward voltage. This 600V family has been primarily designed for motor drive applications up to 30kHz. For this reason, the outstanding features of the diode are softness and VF parameter. This results in diode that has excellent EMI behaviour and low conduction losses. The entire family has been qualified with a Tj (maximum) of 175°C.
Documents
Technical documentation and resources