IRL3803STRLPBF

Infineon Technologies

MOSFET N-CH 30V 140A D2PAK

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Infineon Technologies

MOSFET N-CH 30V 140A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRL3803STRLPBF

Current - Continuous Drain (Id) @ 25°C	140 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	140 nC
Input Capacitance (Ciss) (Max) @ Vds	5000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.8 W, 200 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	FET Type
Infineon Technologies IRL3803STRLPBF	5000 pF	1 V	3.8 W 200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	4.5 V 10 V	140 nC	-55 °C	175 ░C	30 V	Surface Mount	MOSFET (Metal Oxide)	6 mOhm	140 A	16 V	N-Channel
Infineon Technologies IRL3803STRRPBF	5000 pF	1 V	3.8 W 200 W	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	4.5 V 10 V	140 nC	-55 °C	175 ░C	30 V	Surface Mount	MOSFET (Metal Oxide)	6 mOhm	140 A	16 V	N-Channel

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General part information

N-Channel 30 V 140A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK

Technical documentation and resources