SIDC110D170HX1SA2

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Infineon Technologies

DIODE GP 1.7KV 200A WAFER

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Unknown

Infineon Technologies

DIODE GP 1.7KV 200A WAFER

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC110D170HX1SA2

Current - Average Rectified (Io)	200 A
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Sawn on foil
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Package / Case	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Infineon Technologies SIDC110D170HX1SA2	1700 V	Standard	Sawn on foil	Die	200 A	27 µA	150 °C	-55 °C	Standard Recovery >500ns	200 mA	Surface Mount	1.8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1700 V 200A Surface Mount Sawn on foil

Technical documentation and resources

No documents available