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SCTL90N65G2V - STMICROELECTRONICS SCTL35N65G2V

SCTL90N65G2V

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 18 MOHM TYP., 40 A IN A POWERFLAT 8X8 HV PACKAGE

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Search across all available documentation for this part.

DocumentsProduct Change Notice EN+26
SCTL90N65G2V - STMICROELECTRONICS SCTL35N65G2V

SCTL90N65G2V

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 650 V, 18 MOHM TYP., 40 A IN A POWERFLAT 8X8 HV PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice EN+26

Technical Specifications

Parameters and characteristics for this part

SpecificationSCTL90N65G2V
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]157 nC
Input Capacitance (Ciss) (Max) @ Vds3380 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max) [Max]935 W
Rds On (Max) @ Id, Vgs24 mOhm
Supplier Device PackagePowerFlat™ (8x8) HV
Vgs (Max) [Max]22 V
Vgs (Max) [Min]-10 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 34.76
10$ 25.70
100$ 22.54
Digi-Reel® 1$ 34.76
10$ 25.70
100$ 22.54
Tape & Reel (TR) 3000$ 22.54
NewarkEach (Supplied on Cut Tape) 1$ 39.99
10$ 35.41
25$ 34.22
50$ 34.00
100$ 32.83
250$ 32.42
500$ 31.93
1000$ 31.82

Description

General part information

SCTL90N65G2V Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2ndgeneration SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.