IPP22N03S4L15AKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 30V 22A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 30V 22A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPP22N03S4L15AKSA1

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	980 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	14.9 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPP22N03S4L15AKSA1	31 W	MOSFET (Metal Oxide)	22 A	16 V	980 pF	Through Hole	4.5 V 10 V	14 nC	TO-220-3	2.2 V	30 V	N-Channel	14.9 mOhm	PG-TO220-3-1	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 22A (Tc) 31W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources