
IXTY2P50PA
ActiveDISCRETE MOSFET -2A -500V POLARP TO-252

IXTY2P50PA
ActiveDISCRETE MOSFET -2A -500V POLARP TO-252
Description
General part information
IXTY2P50PA Series
IXTY2P50PA is an AEC-Q101 qualified and PPAP available, -500 V, -2 A, PolarTM P-channel enhancement mode power MOSFET in TO-252 (DPAK) package. The P-channel MOSFET is manufactured using the Polar technology platform resulting in significant reduction in on-state resistance (RDS(on),max = 4.2 Ω) and gate charge requirement (Qg = 11.9 nC). The P-channel MOSFET has lower conduction loss and provides excellent switching performance while its dynamic dv/dt and avalanche rating makes it extremely rugged in demanding operating environments and applications. Additionally, the smaller footprint of the TO-252 package enables an efficient and power dense PCB design resulting in space savings.
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTY2P50PA |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 2 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 11.9 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | TO-252 |
| Power Dissipation (Max) | 58 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 4.2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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