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IXTY2P50PA

IXTY2P50PA

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LITTELFUSE

DISCRETE MOSFET -2A -500V POLARP TO-252

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IXTY2P50PA

IXTY2P50PA

Active
LITTELFUSE

DISCRETE MOSFET -2A -500V POLARP TO-252

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Description

General part information

IXTY2P50PA Series

IXTY2P50PA is an AEC-Q101 qualified and PPAP available, -500 V, -2 A, PolarTM P-channel enhancement mode power MOSFET in TO-252 (DPAK) package. The P-channel MOSFET is manufactured using the Polar technology platform resulting in significant reduction in on-state resistance (RDS(on),max = 4.2 Ω) and gate charge requirement (Qg = 11.9 nC). The P-channel MOSFET has lower conduction loss and provides excellent switching performance while its dynamic dv/dt and avalanche rating makes it extremely rugged in demanding operating environments and applications. Additionally, the smaller footprint of the TO-252 package enables an efficient and power dense PCB design resulting in space savings.

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTY2P50PA
Current - Continuous Drain (Id) (Tc)2 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)11.9 nC
GradeAutomotive
Input Capacitance (Ciss) (Max)600 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252
Power Dissipation (Max)58 W
QualificationAEC-Q101
Rds On (Max)4.2 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

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