STTA1206G-TR

Obsolete

STMicroelectronics

DIODE GEN PURP 600V 12A D2PAK

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Obsolete

STMicroelectronics

DIODE GEN PURP 600V 12A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STTA1206G-TR

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	55 ns
Speed	200 mA, 500 ns
Supplier Device Package	D2PAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.75 V

Part	Current - Reverse Leakage @ Vr	Diode Configuration	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Package / Case	Reverse Recovery Time (trr)	Speed	Technology	Supplier Device Package	Current - Average Rectified (Io)	Operating Temperature - Junction
STMicroelectronics STTA12006TV1	200 µA	2 Independent	Chassis Mount	600 V	60 A	1.75 V	ISOTOP	80 ns	200 mA 500 ns	Standard	ISOTOP®
STMicroelectronics STTA1206G-TR	100 µA		Surface Mount	600 V		1.75 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	55 ns	200 mA 500 ns	Standard	D2PAK	12 A	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 12A Surface Mount D2PAK

Technical documentation and resources