STP95N2LH5

Obsolete

STMicroelectronics

MOSFET N-CH 25V 80A TO220AB

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STP95N2LH5

Obsolete

STMicroelectronics

MOSFET N-CH 25V 80A TO220AB

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STP95N2LH5

Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.4 nC
Input Capacitance (Ciss) (Max) @ Vds	1817 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	80 W
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	22 V
Vgs(th) (Max) @ Id	1 V

STP95N4F3 Series

N-channel 40 V, 5.4 mOhm, 80 A, TO-220 STripFET(TM) III Power MOSFET

Part	Technology	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Power Dissipation (Max) [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)
STMicroelectronics STP95N4F3	MOSFET (Metal Oxide)	20 V	-55 °C	175 ░C	2200 pF	40 V	TO-220-3	Through Hole	110 W	N-Channel	10 V	6.2 mOhm	4 V	TO-220	54 nC
STMicroelectronics STP95N2LH5	MOSFET (Metal Oxide)	22 V	-55 °C	175 ░C	1817 pF	25 V	TO-220-3	Through Hole		N-Channel			1 V	TO-220		13.4 nC	10 V	5 V	80 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STP95N4F3 Series

These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.

Documents

Technical documentation and resources