Specification	XPH6R30ANB,L1XHQ

Current - Continuous Drain (Id) (Ta)	45 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	52 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	3240 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Package Length	5 mm
Package Name	8-SOP Advance
Package Width	5 mm
Power Dissipation (Max)	132 W, 960 mW
Qualification	AEC-Q101
Rds On (Max)	6.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

XPH6R30ANB Series

12V - 300V MOSFETs, N-ch MOSFET, 100 V, 45 A, 0.0063 Ω@10V, SOP Advance(WF)

Part	FET Type	Input Capacitance (Ciss) (Max)	Package Width	Package Name	Package Length	Grade	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Package / Case	Technology	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Qualification	Mounting Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Gate Charge (Max)	Vgs (Max)
Toshiba Semiconductor and Storage XPH6R30ANB,L1XHQ	N-Channel	3240 pF	5 mm	8-SOP Advance	5 mm	Automotive	3.5 V	100 V	175 °C	8-PowerVDFN	MOSFET (Metal Oxide)	6.3 mOhm	45 A	132 W 960 mW	AEC-Q101	Surface Mount	6 V	10 V	52 nC	20 V

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