XPH6R30ANB,L1XHQ

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 45A 8SOP

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 45A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	XPH6R30ANB,L1XHQ

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	3240 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	132 W, 960 mW
Rds On (Max) @ Id, Vgs	6.3 mOhm
Supplier Device Package	8-SOP Advance (5x5)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage XPH6R30ANB,L1XHQ	45 A	6.3 mOhm	132 W 960 mW	20 V	MOSFET (Metal Oxide)	6 V 10 V	52 nC	Surface Mount	8-PowerVDFN	100 V	8-SOP Advance (5x5)	3.5 V	N-Channel	175 °C	3240 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 45A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-SOP Advance (5x5)

Technical documentation and resources