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R8003KND3TL1

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Rohm Semiconductor

HIGH-SPEED SWITCHING, NCH 800V 3A, TO-252 (DPAK), POWER MOSFET

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Product dimension image

R8003KND3TL1

Active
Rohm Semiconductor

HIGH-SPEED SWITCHING, NCH 800V 3A, TO-252 (DPAK), POWER MOSFET

Find alt

Description

General part information

R8003 Series

The R8xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.

Technical Specifications

Parameters and characteristics for this part

SpecificationR8003KND3TL1
Current - Continuous Drain (Id) (Ta)3 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)11.5 nC
Input Capacitance (Ciss) (Max)300 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252
Power Dissipation (Max)45 W
Rds On (Max)1.8 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4.5 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Two-Resistor Model for Thermal Simulation
Impedance Characteristics of Bypass Capacitor
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Basics of Thermal Resistance and Heat Dissipation
Moisture Sensitivity Level - Transistors
Condition of Soldering / Land Pattern Reference
How to Use LTspice® Models
Compliance of the RoHS directive
Part Explanation
Notes for Temperature Measurement Using Thermocouples
R8003KND3 Data Sheet
What Is Thermal Design
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Notes for Calculating Power Consumption:Static Operation
How to Create Symbols for PSpice Models
Reliability Test Result
MOSFET Gate Drive Current Setting for Motor Driving
List of Transistor Package Thermal Resistance
About Flammability of Materials
TO-252_TL1 Taping Information
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
MOSFET Gate Resistor Setting for Motor Driving
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Package Dimensions
Precautions When Measuring the Rear of the Package with a Thermocouple
How to Use LTspice® Models: Tips for Improving Convergence
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Calculation of Power Dissipation in Switching Circuit
What is a Thermal Model? (Transistor)
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Method for Monitoring Switching Waveform
PCB Layout Thermal Design Guide
Explanation for Marking
Anti-Whisker formation - Transistors
Temperature derating method for Safe Operating Area (SOA)
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Importance of Probe Calibration When Measuring Power: Deskew
Types and Features of Transistors
Judgment Criteria of Thermal Evaluation
Report of SVHC under REACH Regulation
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Measurement Method and Usage of Thermal Resistance RthJC
About Export Regulations
R8003KND3 ESD Data