TP2540N3-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -400V, 25 OHM 3 TO-92 BAG ROHS COMPLIANT: YES
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TP2540N3-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -400V, 25 OHM 3 TO-92 BAG ROHS COMPLIANT: YES
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TP2540N3-G | TP2540 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | - | 86 - 125 mA |
| Drain to Source Voltage (Vdss) | - | 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 4.5 - 10 V |
| FET Type | - | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - | 125 pF |
| Mounting Type | - | Through Hole, Surface Mount |
| null | - | |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 150 °C |
| Package / Case | - | TO-226-3, TO-92-3, TO-243AA |
| Power Dissipation (Max) | - | 740 mW |
| Rds On (Max) @ Id, Vgs | - | 25 Ohm |
| Supplier Device Package | - | TO-92-3, TO-243AA (SOT-89) |
| Technology | - | MOSFET (Metal Oxide) |
| Vgs (Max) | - | 20 V |
| Vgs(th) (Max) @ Id | - | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 1.78 | |
| 25 | $ 1.49 | |||
| 100 | $ 1.35 | |||
| Microchip Direct | BAG | 1 | $ 1.78 | |
| 25 | $ 1.49 | |||
| 100 | $ 1.35 | |||
| 1000 | $ 1.12 | |||
| 5000 | $ 1.03 | |||
| 10000 | $ 0.97 | |||
| Newark | Each | 100 | $ 1.39 | |
TP2540 Series
MOSFET, P-Channel Enhancement-Mode, -400V, 25 Ohm
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Package / Case | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Technology | Vgs(th) (Max) @ Id | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TP2540N3-G | |||||||||||||||
Microchip Technology TP2540N3-G-P002 | Through Hole | 86 mA | TO-226-3, TO-92-3 | 20 V | 125 pF | 4.5 V, 10 V | -55 °C | 150 °C | 400 V | 740 mW | MOSFET (Metal Oxide) | 2.4 V | TO-92-3 | 25 Ohm | P-Channel |
Microchip Technology TP2540N8-G | Surface Mount | 125 mA | TO-243AA | 20 V | 125 pF | 4.5 V, 10 V | -55 °C | 150 °C | 400 V | MOSFET (Metal Oxide) | 2.4 V | TO-243AA (SOT-89) | 25 Ohm | P-Channel | |
Microchip Technology TP2540N8-G | |||||||||||||||
Microchip Technology TP2540N8-G | |||||||||||||||
Microchip Technology TP2540N3-G | Through Hole | 86 mA | TO-226-3, TO-92-3 | 20 V | 125 pF | 4.5 V, 10 V | -55 °C | 150 °C | 400 V | 740 mW | MOSFET (Metal Oxide) | 2.4 V | TO-92-3 | 25 Ohm | P-Channel |
Description
General part information
TP2540 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources