Technical Specifications
Parameters and characteristics for this part
| Specification | D45H11 |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 hFE |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 50 W |
| Supplier Device Package | TO-220 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
D45H11 Series
The devices are manufactured in low voltage multi epitaxial planar technology. They are intended for general purpose linear and switching applications
Documents
Technical documentation and resources