STL4P2UH7

Obsolete

STMicroelectronics

MOSFET P-CH 20V 4A POWERFLAT

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STL4P2UH7

Obsolete

STMicroelectronics

MOSFET P-CH 20V 4A POWERFLAT

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL4P2UH7

Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.8 nC
Input Capacitance (Ciss) (Max) @ Vds	510 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-PowerWDFN
Power Dissipation (Max)	2.4 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	PowerFlat™ (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

STL4LN80K5 Series

N-channel 800 V, 2.1 Ohm typ., 2 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

Part	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Operating Temperature	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STL4LN80K5	30 V	4 nC	Surface Mount	8-PowerVDFN	PowerFlat™ (5x6) VHV	10 V	MOSFET (Metal Oxide)	3 A	N-Channel	110 pF	2.6 Ohm	38 W	800 V	5 V	-55 °C	150 °C
STMicroelectronics STL4P2UH7	8 V		Surface Mount	6-PowerWDFN	PowerFlat™ (2x2)	1.8 V 4.5 V	MOSFET (Metal Oxide)	4 A	P-Channel	510 pF		2.4 W	20 V	1 V			150 °C	100 mOhm	4.8 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STL4LN80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Documents

Technical documentation and resources