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STD16N60M6 - DPAK

STD16N60M6

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STMicroelectronics

N-CHANNEL 600 V, 0.260 OHM TYP., 12 A MDMESH M6 POWER MOSFET IN A DPAK PACKAGE

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STD16N60M6 - DPAK

STD16N60M6

Active
STMicroelectronics

N-CHANNEL 600 V, 0.260 OHM TYP., 12 A MDMESH M6 POWER MOSFET IN A DPAK PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD16N60M6
Current - Continuous Drain (Id) @ 25°C12 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs16.7 nC
Input Capacitance (Ciss) (Max) @ Vds575 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]110 W
Rds On (Max) @ Id, Vgs320 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4.75 V

STD16N50M2 Series

N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh M6 Power MOSFET in a DPAK package

PartDrain to Source Voltage (Vdss)Operating Temperature [Min]Operating Temperature [Max]Supplier Device PackagePower Dissipation (Max) [Max]Drive Voltage (Max Rds On, Min Rds On)Vgs (Max)Rds On (Max) @ Id, Vgs [Max]Package / CaseInput Capacitance (Ciss) (Max) @ VdsVgs(th) (Max) @ IdFET TypeCurrent - Continuous Drain (Id) @ 25°CTechnologyGate Charge (Qg) (Max) @ Vgs [Max]Mounting TypeGate Charge (Qg) (Max) @ VgsRds On (Max) @ Id, VgsOperating Temperature
STMicroelectronics
250 V
-55 °C
150 °C
DPAK
100 W
10 V
20 V
235 mOhm
DPAK (2 Leads + Tab)
SC-63
TO-252-3
680 pF
4 V
N-Channel
14 A
MOSFET (Metal Oxide)
18 nC
Surface Mount
STMicroelectronics
500 V
-55 °C
150 °C
DPAK
110 W
10 V
25 V
DPAK (2 Leads + Tab)
SC-63
TO-252-3
710 pF
4 V
N-Channel
13 A
MOSFET (Metal Oxide)
Surface Mount
19.5 nC
280 mOhm
STMicroelectronics
600 V
-55 °C
150 °C
TO-252 (DPAK)
110 W
10 V
25 V
DPAK (2 Leads + Tab)
SC-63
TO-252-3
575 pF
4.75 V
N-Channel
12 A
MOSFET (Metal Oxide)
Surface Mount
16.7 nC
320 mOhm
STMicroelectronics
600 V
DPAK
110 W
10 V
25 V
DPAK (2 Leads + Tab)
SC-63
TO-252-3
700 pF
4 V
N-Channel
12 A
MOSFET (Metal Oxide)
Surface Mount
19 nC
320 mOhm
150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.13
10$ 1.77
100$ 1.41
500$ 1.19
1000$ 1.01
Digi-Reel® 1$ 2.13
10$ 1.77
100$ 1.41
500$ 1.19
1000$ 1.01
Tape & Reel (TR) 2500$ 0.96
5000$ 0.93

Description

General part information

STD16N50M2 Series

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.

Documents

Technical documentation and resources