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STL20N6F7 - Power MOSFET, N Channel, 60 V, 100 A, 5.4 Milliohms, PowerFLAT HV, 8 Pins, Surface Mount

STL20N6F7

Active
STMicroelectronics

N-CHANNEL 60 V, 0.0046 OHM TYP., 20 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+17
STL20N6F7 - Power MOSFET, N Channel, 60 V, 100 A, 5.4 Milliohms, PowerFLAT HV, 8 Pins, Surface Mount

STL20N6F7

Active
STMicroelectronics

N-CHANNEL 60 V, 0.0046 OHM TYP., 20 A STRIPFET F7 POWER MOSFET IN A POWERFLAT 3.3X3.3 PACKAGE

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTL20N6F7
Current - Continuous Drain (Id) @ 25°C100 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25 nC
Input Capacitance (Ciss) (Max) @ Vds1600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)78 W, 3 W
Rds On (Max) @ Id, Vgs5.4 mOhm
Supplier Device PackagePowerFlat™ (3.3x3.3)
Supplier Device Package [x]3.3
Supplier Device Package [y]3.3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.19
10$ 0.97
100$ 0.76
500$ 0.64
1000$ 0.52
Digi-Reel® 1$ 1.19
10$ 0.97
100$ 0.76
500$ 0.64
1000$ 0.52
Tape & Reel (TR) 3000$ 0.49
6000$ 0.47
9000$ 0.45
NewarkEach (Supplied on Cut Tape) 1$ 1.93
10$ 1.30
25$ 1.18
50$ 1.06
100$ 0.94
250$ 0.87
500$ 0.79
1000$ 0.74

Description

General part information

STL20N6F7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.