Specification	SIS782DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Max)	30.5 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-50 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	41 W
Rds On (Max)	9.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.3 V

SIS782 Series

Part	Vgs (Max)	Package Name	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Mounting Type	Technology	Vgs(th) (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max)
Vishay Dale SIS782DN-T1-GE3	20 V	PowerPAK® 1212-8	41 W	10 V	4.5 V	16 A	-50 °C	150 °C	30.5 nC	Surface Mount	MOSFET (Metal Oxide)	2.3 V	N-Channel	Schottky Diode (Body)	30 V	PowerPAK® 1212-8	9.5 mOhm

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