BCR 191L3 E6327

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Infineon Technologies

TRANS PREBIAS PNP 50V TSLP-3

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Infineon Technologies

TRANS PREBIAS PNP 50V TSLP-3

Technical Specifications

Parameters and characteristics for this part

Specification	BCR 191L3 E6327

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SOT-883, SC-101
Power - Max [Max]	250 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	22 kOhms
Supplier Device Package	PG-TSLP-3-4
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Resistor - Base (R1)	Resistor - Emitter Base (R2)	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package
Infineon Technologies BCR 191L3 E6327	100 mA	200 MHz	250 mW	300 mV	Surface Mount	22 kOhms	22 kOhms	PNP - Pre-Biased	100 nA	50 V	SC-101 SOT-883	50	PG-TSLP-3-4
Infineon Technologies BCR 191T E6327	100 mA	200 MHz	250 mW	300 mV	Surface Mount	22 kOhms	22 kOhms	PNP - Pre-Biased	100 nA	50 V	SC-75 SOT-416	50	PG-SC75-3D

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 250 mW Surface Mount PG-TSLP-3-4

Technical documentation and resources