IXFN36N110P

Obsolete

IXYS

MOSFET N-CH 1100V 36A SOT-227B

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Obsolete

IXYS

MOSFET N-CH 1100V 36A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN36N110P

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	1100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	350 nC
Input Capacitance (Ciss) (Max) @ Vds	23000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	1000 W
Rds On (Max) @ Id, Vgs	240 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
IXYS IXFN36N60	SOT-227-4 miniBLOC	SOT-227B	-55 °C	150 °C	9000 pF	Chassis Mount	325 nC	36 A	N-Channel	180 mOhm	10 V	520 W	4.5 V	600 V	MOSFET (Metal Oxide)	20 V
IXYS IXFN36N110P	SOT-227-4 miniBLOC	SOT-227B	-55 °C	150 °C	23000 pF	Chassis Mount		36 A	N-Channel	240 mOhm	10 V	1000 W	6.5 V	1100 V	MOSFET (Metal Oxide)	30 V	350 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1100 V 36A (Tc) 1000W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available