SDT08S60

Obsolete

Infineon Technologies

DIODE SIL CARB 600V 8A PGTO2202

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Obsolete

Infineon Technologies

DIODE SIL CARB 600V 8A PGTO2202

Technical Specifications

Parameters and characteristics for this part

Specification	SDT08S60

Capacitance @ Vr, F	280 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	300 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO220-2-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Package / Case	Technology	Current - Average Rectified (Io)	Supplier Device Package	Speed	Voltage - DC Reverse (Vr) (Max) [Max]
Infineon Technologies SDT08S60	280 pF	1.7 V	Through Hole	175 ░C	-55 C	300 µA	0 ns	TO-220-2	SiC (Silicon Carbide) Schottky	8 A	PG-TO220-2-2	No Recovery Time	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 8A Through Hole PG-TO220-2-2

Technical documentation and resources