RN4611(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS PREBIAS 1NPN 1PNP 50V SM6

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Toshiba Semiconductor and Storage

TRANS PREBIAS 1NPN 1PNP 50V SM6

Technical Specifications

Parameters and characteristics for this part

Specification	RN4611(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Power - Max [Max]	300 mW
Supplier Device Package	SM6
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Package / Case	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage RN4611(TE85L,F)	100 nA	50 V	300 mW	1 NPN 1 PNP	300 mV	120	SM6	SC-74 SOT-457	Surface Mount	200 MHz	100 mA

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General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 300mW Surface Mount SM6

Technical documentation and resources