IDW75D65D1XKSA1
ActiveInfineon Technologies
THE IDW75D65D1 IS A 650 V SILICON POWER DIODE IN TO-247 PACKAGE
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IDW75D65D1XKSA1
ActiveInfineon Technologies
THE IDW75D65D1 IS A 650 V SILICON POWER DIODE IN TO-247 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IDW75D65D1XKSA1 |
|---|---|
| Current - Average Rectified (Io) | 150 A |
| Current - Reverse Leakage @ Vr | 40 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-247-3 |
| Reverse Recovery Time (trr) | 108 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | PG-TO247-3 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IDW75D65 Series
Rapid 1switching 650 V, 75 A emitter controlledpower silicon diodesin dual anode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.
Documents
Technical documentation and resources