BFP740ESDH6327XTSA1

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Infineon Technologies

BIPOLAR - RF TRANSISTOR, NPN, 4.2 V, 45 GHZ, 160 MW, 45 MA, SOT-343

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Infineon Technologies

BIPOLAR - RF TRANSISTOR, NPN, 4.2 V, 45 GHZ, 160 MW, 45 MA, SOT-343

Technical Specifications

Parameters and characteristics for this part

Specification	BFP740ESDH6327XTSA1

Current - Collector (Ic) (Max) [Max]	45 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	45 GHz
Gain [Max]	30.5 dB
Gain [Min]	8.5 dB
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.8 dB
Noise Figure (dB Typ @ f) [Min]	0.55 dB
Operating Temperature	150 °C
Package / Case	SC-82A, SOT-343
Power - Max [Max]	160 mW
Supplier Device Package	PG-SOT343-4-2
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	4.7 V

Part	Operating Temperature	Frequency - Transition	Transistor Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Gain [Max]	Gain [Min]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Mounting Type	Noise Figure (dB Typ @ f) [Max]	Noise Figure (dB Typ @ f) [Min]
Infineon Technologies BFP740ESDH6327XTSA1	150 °C	45 GHz	NPN	45 mA	160 mW	4.7 V	PG-SOT343-4-2	30.5 dB	8.5 dB	160	SC-82A SOT-343	Surface Mount	1.8 dB	0.55 dB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Technical documentation and resources