
2SCR502E3HZGTL
ActiveBIPOLAR TRANSISTORS - BJT VARIOUS PRODUCTS ARE AVAILABLE IN LINEUP DEVELOPED FOCUSING ON ENERGY-SAVING AND HIGH RELIABILITY AS MAIN CONCEPTS, COVERING FROM ULTRA-COMPACT PACKAGES TO POWER-PACKAGES TO MEET THE NEEDS IN MARKET.

2SCR502E3HZGTL
ActiveBIPOLAR TRANSISTORS - BJT VARIOUS PRODUCTS ARE AVAILABLE IN LINEUP DEVELOPED FOCUSING ON ENERGY-SAVING AND HIGH RELIABILITY AS MAIN CONCEPTS, COVERING FROM ULTRA-COMPACT PACKAGES TO POWER-PACKAGES TO MEET THE NEEDS IN MARKET.
Description
General part information
2SCR502 Series
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SCR502E3HZGTL |
|---|---|
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 200 nA |
| DC Current Gain (hFE) (Min) | 200 |
| Frequency - Transition | 360 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-416, SC-75 |
| Package Name | EMT3 |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources