TSM061NA03CV RGG

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 30V 66A 8PDFN

Search across all available documentation for this part.

Obsolete

Taiwan Semiconductor Corporation

MOSFET N-CH 30V 66A 8PDFN

Technical Specifications

Parameters and characteristics for this part

Specification	TSM061NA03CV RGG

Current - Continuous Drain (Id) @ 25°C	66 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	19.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1136 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerWDFN
Power Dissipation (Max) [Max]	44.6 W
Rds On (Max) @ Id, Vgs [Max]	6.1 mOhm
Supplier Device Package	8-PDFN (3.1x3.1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]
Taiwan Semiconductor Corporation TSM061NA03CV RGG	N-Channel	-55 °C	150 °C	8-PowerWDFN	2.5 V	4.5 V 10 V	20 V	30 V	66 A	8-PDFN (3.1x3.1)	19.3 nC	Surface Mount	1136 pF	MOSFET (Metal Oxide)	44.6 W	6.1 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 66A (Tc) 44.6W (Tc) Surface Mount 8-PDFN (3.1x3.1)

Technical documentation and resources

No documents available