Specification	SI3805DV-T1-GE3

Current - Continuous Drain (Id) (Tc)	3.3 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	330 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	1.1 W, 1.4 W
Rds On (Max)	84 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

SI3805 Series

Part	Package / Case	FET Type	Package Name	Technology	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Power Dissipation (Max)	FET Feature	Rds On (Max)	Mounting Type	Gate Charge (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Input Capacitance (Ciss) (Max)
Vishay Dale SI3805DV-T1-GE3	SOT-23-6 Thin TSOT-23-6	P-Channel	6-TSOP	MOSFET (Metal Oxide)	3.3 A	12 V	-55 °C	150 °C	20 V	1.5 V	1.1 W 1.4 W	Schottky Diode (Isolated)	84 mOhm	Surface Mount	12 nC	10 V	2.5 V	330 pF

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