IMBG65R007M2HXTMA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 238 A, 650 V, 0.0061 OHM, TO-263 (D2PAK)

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IMBG65R007M2HXTMA1

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Infineon Technologies

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 238 A, 650 V, 0.0061 OHM, TO-263 (D2PAK)

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMBG65R007M2HXTMA1

Current - Continuous Drain (Id) @ 25°C	238 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	15 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	179 nC
Input Capacitance (Ciss) (Max) @ Vds	6359 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	789 W
Rds On (Max) @ Id, Vgs	8.5 mOhm
Supplier Device Package	PG-TO263-7-12
Vgs (Max)	-7 V, 23 V
Vgs(th) (Max) @ Id	5.6 V

IMBG65R007 Series

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)
Infineon Technologies IMBG65R007M2HXTMA1	N-Channel	179 nC	789 W	5.6 V	238 A	-55 °C	175 ░C	15 V	20 V	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	PG-TO263-7-12	8.5 mOhm	6359 pF	Surface Mount	-7 V 23 V	650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 38.23
		10	$ 35.26
		25	$ 33.68
		100	$ 30.11
		250	$ 28.72
	Digi-Reel®	1	$ 38.23
		10	$ 35.26
		25	$ 33.68
		100	$ 30.11
		250	$ 28.72
	Tape & Reel (TR)	1000	$ 25.75
Newark	Each (Supplied on Cut Tape)	1	$ 27.40
		10	$ 19.99
		25	$ 19.10
		50	$ 18.22
		100	$ 17.34

Description

General part information

IMBG65R007 Series

The CoolSiC™ MOSFET 650 V, 7 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Documents

Technical documentation and resources