ZXTN2011GTA

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Diodes Inc

POWER BIPOLAR TRANSISTOR, 6A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-261AA, PLASTIC/EPOXY, 4 PIN, TO-261AA, 4 PIN

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 6A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-261AA, PLASTIC/EPOXY, 4 PIN, TO-261AA, 4 PIN

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTN2011GTA

Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	130 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	3 W
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	220 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NPN, 100V, 4.5A, SOT89

Part	Power - Max [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Transistor Type	Operating Temperature [Min]	Operating Temperature [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector (Ic) (Max) [Max]
Diodes Inc ZXTN2011GTA	3 W	Surface Mount	220 mV	100 V	130 MHz	SOT-223-3	50 nA	NPN	-55 °C	150 °C	100	TO-261-4 TO-261AA
Diodes Inc ZXTN2011ZTA	2.1 W	Surface Mount		100 V	130 MHz	SOT-89-3	50 nA	NPN	-55 °C	150 °C	100	TO-243AA	195 mV	4.5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 100V, 4.5A, SOT89

Technical documentation and resources