1SR156-400TE25

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Rohm Semiconductor

DIODE GEN PURP 400V 1A PMDS

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Rohm Semiconductor

DIODE GEN PURP 400V 1A PMDS

Technical Specifications

Parameters and characteristics for this part

Specification	1SR156-400TE25

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	400 ns
Speed	200 mA, 500 ns
Supplier Device Package	PMDS
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	400 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

DIODE GEN PURP 400V 1A PMDS

Part	Reverse Recovery Time (trr)	Mounting Type	Technology	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Package / Case	Speed
Rohm Semiconductor 1SR156-400TE25	400 ns	Surface Mount	Standard	1 A	1.3 V	400 V	PMDS	10 µA	150 °C	DO-214AC, SMA	200 mA, 500 ns

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General part information

Diode 400 V 1A Surface Mount PMDS

Technical documentation and resources

No documents available